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新一代大尺寸集成电路硅单晶生长设备试产成功

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新一代大尺寸集成电路硅单晶生长设备试产成功

  上图 国内首台新一代大尺寸集成电路硅单晶生长设备。

  经济日报-中国经济网讯记者张毅报道:由西安理工大学和西安奕斯伟硅片技术有限公司共同研制的国内首台新一代大尺寸集成电路硅单晶生长设备日前在西安实现一次试产成功。据悉,大尺寸半导体硅单晶材料是制约我国集成电路产业发展的“卡脖子”问题。在该领域实现突破,对满足我国集成电路产业发展意义重大。

  2018年起,西安理工大学刘丁教授团队与西安奕斯伟硅片技术有限公司紧密协作,开展技术攻关,成功研制出直径300毫米、长度2100毫米的高品质硅单晶材料。实现了采用自主研发国产装备拉制成功大尺寸、高品质集成电路级硅单晶材料的突破。

[ 责编:宫辞 ]

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